Research

The rapid advancement of big data and the Internet of Things has led to an exponential rise in the need for low-power data storage and processing. This escalating demand for nanoelectronic devices has brought about a pressing need to explore new materials, devise innovative structures, and ultimately develop next-generation electronic devices. However, the field faces a significant bottleneck problem due to various challenges. Experimental studies are often limited in scope and susceptible to external factors, underscoring the critical role of theoretical calculation techniques as a powerful tool for studying material structures and properties at the atomic scale. By bridging the gap between theoretical understanding and practical implementation, these approaches pave the way for groundbreaking advancements in the development of low-power data storage and processing devices.

Orbital Hall effect

The orbital Hall effect (OHE) is a significant breakthrough in condensed matter physics, similar to the spin Hall effect (SHE). While the SHE separates electrons based on their spin in an electric field, the OHE instead involves the lateral movement of orbital angular momentum. Unlike the SHE, which relies on spin, the OHE is driven by the unique orbital characteristics of electrons in momentum space, making it applicable even in systems with weak spin-orbit coupling. OHE offers a novel approach to manipulating electronic properties by leveraging orbital degrees of freedom, a less explored avenue compared to spin-based methods. This phenomenon opens up possibilities for generating, detecting, and controlling orbital angular momentum currents, potentially revolutionizing device designs for quantum computing, information storage, and spintronics.

Altermagnets

- a novel class of magnetic states 

The altermagnetic is a new class of magnetic states that exhibit a unique magnetic ordering that combines the directional magnetization of ferromagnets with the net-zero magnetization characteristics of antiferromagnets. This unique configuration allows modified magnets to maintain strong magnetic anisotropy and robustness to external magnetic fields while having no net magnetic moment in the ground state. They become ideal candidates for next-generation magnetic and electronic applications.



Publications coming soon...

2D Magnetic Tunnel Junctions

I design heterojunctions with tailored magnetoelectric properties for high-performance information storage devices. I exploit interface science to improve the low efficiency of spin injection caused by lattice mismatch, physical science to switch the ferromagnetic and anti-ferromagnetic states without using an external magnetic field, and electronic engineering to functionalize the designed magnetic tunnel junctions' data reading and writing abilities. These designs make 2D materials unique advantages in magnetic tunnel junctions. And I give a fundamental understanding of spin-electron interactions and practical applications in MRAM, microwave oscillator, read head and so on. Check my publications below for more details:

Nanostructures and their electron transport properties

I predict a number of new materials/structures that have potential for application in nanoelectronic devices. These devices that I construct demonstrate excellent electron transport and versatile properties. For example, I find and reveal that experimentally successful synthesized two-node hollow fullerene devices are highly sensitive and selective to greenhouse gas molecules and can be used for gas sensors. Check my publications below for more details:

Lead and Lead-Silicon nanowires

I have used genetic algorithms, molecular dynamics, and density flooding theory to reveal the intrinsic connection between the geometry, electronic structure, and electron transport properties of Pb and PbSi nanowires. The influence of diameter and doping element ratio on the electron transport properties was also investigated. These provide a theoretical basis for the application of such nanowires in the design and preparation of Schottky transistors. Check my publications below for more details: